Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond
Low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p-type without the addition of conventional dopant atoms, are reported. The carrier concentration within the temperature range 10-300 K does not change as ex...
| Main Authors: | , , , , , |
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| 格式: | Conference item |
| 出版: |
2001
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