Suppression of dislocation activity in strained epilayers
A new technique where a stress opposing the misfit stress is applied to the strained layers allows study of the conditions under which dislocations nucleate and propagate. Using this technique it is possible to suppress dislocation nucleation and reduce dislocation velocities at different stress lev...
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| Format: | Conference item |
| Published: |
1998
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| Summary: | A new technique where a stress opposing the misfit stress is applied to the strained layers allows study of the conditions under which dislocations nucleate and propagate. Using this technique it is possible to suppress dislocation nucleation and reduce dislocation velocities at different stress levels without changing the epilayer thickness or the composition of the layer. The activation energy for the nucleation of dislocations at "natural" heterogeneous dislocation sources was determined to E-n=0.6 - 0.7 eV. |
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