The effect of elemental substitution on the electronic properties of Ru2Ge3
The effect of chemical substitution on the electrical resistivity and Seebeck coefficients of Ru2Ge3 is reported, with a particular emphasis on enhancing the properties relevant to thermoelectric behaviour. The properties of Ru2Ge3 itself are shown to be strongly dependent on quenching temperature....
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
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2002
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| _version_ | 1826271694483881984 |
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| author | Hayward, M Cava, R |
| author_facet | Hayward, M Cava, R |
| author_sort | Hayward, M |
| collection | OXFORD |
| description | The effect of chemical substitution on the electrical resistivity and Seebeck coefficients of Ru2Ge3 is reported, with a particular emphasis on enhancing the properties relevant to thermoelectric behaviour. The properties of Ru2Ge3 itself are shown to be strongly dependent on quenching temperature. The effects of metal doping for Ru and metalloid substitution (Sn and Si) for Ge are reported. It is shown that doping of both ruthenium and germanium sites is required to reduce the high resistivity of Ru2Ge3 (∼280 mΩ cm at 300 K) to a value of 1.5 mΩ cm, for Ru1.85Mn0.15Ge2.4Sn0.6 while maintaining high Seebeck coefficients. This latter composition has the highest thermoelectric figure of merit observed in this system: ZT300 K = 1 × 10-2. Unfortunately this value is too small to be competitive with existing materials. |
| first_indexed | 2024-03-06T22:00:42Z |
| format | Journal article |
| id | oxford-uuid:4e7c9ec3-d917-47c3-a0bf-0185b9178b4b |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T22:00:42Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:4e7c9ec3-d917-47c3-a0bf-0185b9178b4b2022-03-26T16:01:24ZThe effect of elemental substitution on the electronic properties of Ru2Ge3Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4e7c9ec3-d917-47c3-a0bf-0185b9178b4bEnglishSymplectic Elements at Oxford2002Hayward, MCava, RThe effect of chemical substitution on the electrical resistivity and Seebeck coefficients of Ru2Ge3 is reported, with a particular emphasis on enhancing the properties relevant to thermoelectric behaviour. The properties of Ru2Ge3 itself are shown to be strongly dependent on quenching temperature. The effects of metal doping for Ru and metalloid substitution (Sn and Si) for Ge are reported. It is shown that doping of both ruthenium and germanium sites is required to reduce the high resistivity of Ru2Ge3 (∼280 mΩ cm at 300 K) to a value of 1.5 mΩ cm, for Ru1.85Mn0.15Ge2.4Sn0.6 while maintaining high Seebeck coefficients. This latter composition has the highest thermoelectric figure of merit observed in this system: ZT300 K = 1 × 10-2. Unfortunately this value is too small to be competitive with existing materials. |
| spellingShingle | Hayward, M Cava, R The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title | The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title_full | The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title_fullStr | The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title_full_unstemmed | The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title_short | The effect of elemental substitution on the electronic properties of Ru2Ge3 |
| title_sort | effect of elemental substitution on the electronic properties of ru2ge3 |
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