Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
<p style="text-align:justify;"> The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves...
| Үндсэн зохиолчид: | , , , |
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| Формат: | Conference item |
| Хэвлэсэн: |
National Radio Astronomy Observatory
2009
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| Тойм: | <p style="text-align:justify;"> The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves of an SIS device at 700 GHz, together with the coupled LO power and the embedding impedance. Since this is obtained without assuming a particular power law between LO power and junction temperature, we will be able to find τeph, the electron-phonon interaction time of the superconducting material at various bath temperatures. We would deduce a power law that describes the dependence of the heat flow equation on temperature. </p> |
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