Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction

<p style="text-align:justify;"> The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves...

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Bibliografiske detaljer
Main Authors: Tan, B, Yassin, G, Kittara, P, Leech, J
Format: Conference item
Udgivet: National Radio Astronomy Observatory 2009
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author Tan, B
Yassin, G
Kittara, P
Leech, J
author_facet Tan, B
Yassin, G
Kittara, P
Leech, J
author_sort Tan, B
collection OXFORD
description <p style="text-align:justify;"> The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves of an SIS device at 700 GHz, together with the coupled LO power and the embedding impedance. Since this is obtained without assuming a particular power law between LO power and junction temperature, we will be able to find τeph, the electron-phonon interaction time of the superconducting material at various bath temperatures. We would deduce a power law that describes the dependence of the heat flow equation on temperature. </p>
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spelling oxford-uuid:4f4010cd-65f9-4425-b00f-ac15e1617f602022-03-26T16:05:54ZMeasurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junctionConference itemhttp://purl.org/coar/resource_type/c_5794uuid:4f4010cd-65f9-4425-b00f-ac15e1617f60Symplectic Elements at OxfordNational Radio Astronomy Observatory2009Tan, BYassin, GKittara, PLeech, J <p style="text-align:justify;"> The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves of an SIS device at 700 GHz, together with the coupled LO power and the embedding impedance. Since this is obtained without assuming a particular power law between LO power and junction temperature, we will be able to find τeph, the electron-phonon interaction time of the superconducting material at various bath temperatures. We would deduce a power law that describes the dependence of the heat flow equation on temperature. </p>
spellingShingle Tan, B
Yassin, G
Kittara, P
Leech, J
Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title_full Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title_fullStr Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title_full_unstemmed Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title_short Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
title_sort measurement of electron phonon interaction time of niobium using heating effect in sis tunnel junction
work_keys_str_mv AT tanb measurementofelectronphononinteractiontimeofniobiumusingheatingeffectinsistunneljunction
AT yassing measurementofelectronphononinteractiontimeofniobiumusingheatingeffectinsistunneljunction
AT kittarap measurementofelectronphononinteractiontimeofniobiumusingheatingeffectinsistunneljunction
AT leechj measurementofelectronphononinteractiontimeofniobiumusingheatingeffectinsistunneljunction