Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors

We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid...

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Opis bibliograficzny
Główni autorzy: Fried, JP, Bian, X, Swett, JL, Kravchenko, II, Briggs, GAD, Mol, JA
Format: Journal article
Język:English
Wydane: Royal Society of Chemistry 2019
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author Fried, JP
Bian, X
Swett, JL
Kravchenko, II
Briggs, GAD
Mol, JA
author_facet Fried, JP
Bian, X
Swett, JL
Kravchenko, II
Briggs, GAD
Mol, JA
author_sort Fried, JP
collection OXFORD
description We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing.
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spelling oxford-uuid:4f9340e0-ca73-400e-8043-adb8aeb9031c2022-03-26T16:08:04ZLarge amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4f9340e0-ca73-400e-8043-adb8aeb9031cEnglishSymplectic ElementsRoyal Society of Chemistry2019Fried, JPBian, XSwett, JLKravchenko, IIBriggs, GADMol, JAWe analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing.
spellingShingle Fried, JP
Bian, X
Swett, JL
Kravchenko, II
Briggs, GAD
Mol, JA
Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title_full Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title_fullStr Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title_full_unstemmed Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title_short Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors
title_sort large amplitude charge noise and random telegraph fluctuations in room temperature graphene single electron transistors
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