Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds b...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2009
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