Time-resolved gain dynamics in InGaN MQW structures
Transient gain spectra were measured for an In0.02Ga0.98N / In0.16Ga0.84N multiple quantum well by using the variable-stripe-length method (VSLM) in combination with the ultrafast optical Kerr-gate (OKG) technique. Gain dynamics were measured for a range of excitation lengths from short (50 mu m) to...
| Asıl Yazarlar: | , , |
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| Materyal Türü: | Conference item |
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2005
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| _version_ | 1826272536933957632 |
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| author | Kyhm, K Smith, J Taylor, R |
| author_facet | Kyhm, K Smith, J Taylor, R |
| author_sort | Kyhm, K |
| collection | OXFORD |
| description | Transient gain spectra were measured for an In0.02Ga0.98N / In0.16Ga0.84N multiple quantum well by using the variable-stripe-length method (VSLM) in combination with the ultrafast optical Kerr-gate (OKG) technique. Gain dynamics were measured for a range of excitation lengths from short (50 mu m) to long (350 mu m) stripes with the sample under femtosecond photoexcitation. Analysis of the temporal behaviour of gain and chemical potential suggests that stimulated emission originates from a photoexcited electron-hole plasma at early times; at later times, localized states dominate as the electron-hole plasma becomes exhausted. Gain reduction at early times is attributable to coupling of the electron-hole plasma with photons along the stripe, whilst localized states are less susceptible to gain saturation. |
| first_indexed | 2024-03-06T22:14:07Z |
| format | Conference item |
| id | oxford-uuid:52d2519b-cb94-441f-a5cb-7549b8b5da30 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:14:07Z |
| publishDate | 2005 |
| record_format | dspace |
| spelling | oxford-uuid:52d2519b-cb94-441f-a5cb-7549b8b5da302022-03-26T16:27:44ZTime-resolved gain dynamics in InGaN MQW structuresConference itemhttp://purl.org/coar/resource_type/c_5794uuid:52d2519b-cb94-441f-a5cb-7549b8b5da30Symplectic Elements at Oxford2005Kyhm, KSmith, JTaylor, RTransient gain spectra were measured for an In0.02Ga0.98N / In0.16Ga0.84N multiple quantum well by using the variable-stripe-length method (VSLM) in combination with the ultrafast optical Kerr-gate (OKG) technique. Gain dynamics were measured for a range of excitation lengths from short (50 mu m) to long (350 mu m) stripes with the sample under femtosecond photoexcitation. Analysis of the temporal behaviour of gain and chemical potential suggests that stimulated emission originates from a photoexcited electron-hole plasma at early times; at later times, localized states dominate as the electron-hole plasma becomes exhausted. Gain reduction at early times is attributable to coupling of the electron-hole plasma with photons along the stripe, whilst localized states are less susceptible to gain saturation. |
| spellingShingle | Kyhm, K Smith, J Taylor, R Time-resolved gain dynamics in InGaN MQW structures |
| title | Time-resolved gain dynamics in InGaN MQW structures |
| title_full | Time-resolved gain dynamics in InGaN MQW structures |
| title_fullStr | Time-resolved gain dynamics in InGaN MQW structures |
| title_full_unstemmed | Time-resolved gain dynamics in InGaN MQW structures |
| title_short | Time-resolved gain dynamics in InGaN MQW structures |
| title_sort | time resolved gain dynamics in ingan mqw structures |
| work_keys_str_mv | AT kyhmk timeresolvedgaindynamicsininganmqwstructures AT smithj timeresolvedgaindynamicsininganmqwstructures AT taylorr timeresolvedgaindynamicsininganmqwstructures |