A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers

The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be obser...

全面介紹

書目詳細資料
Main Authors: Jang, J, Cha, S, Butler, T, Sohn, J, Kim, J, Jin, Y, Amaratunga, G, Jung, J
格式: Journal article
語言:English
出版: 2009
實物特徵
總結:The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. The threshold slope broadens as the number of layers in the channel increases and, in the case of a two-layer channel, a double turn-on effect can be observed. The gatefield simulation shows gate-field distortion by the surface of the nanowire. © 2009 WILEY-VCH Verlag GmbH and Co. KGaA.