Minority carrier lifetime in Czochralski silicon containing oxide precipitates
Photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed under very clean conditions to contain oxide precipitates. 24 different sample types were characterised by chemical etching and transmission electron microscopy to determine the density an...
| Autors principals: | , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
2010
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