THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON

Bibliographic Details
Main Authors: Wilshaw, P, Fell, T
Format: Conference item
Published: 1989
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author Wilshaw, P
Fell, T
author_facet Wilshaw, P
Fell, T
author_sort Wilshaw, P
collection OXFORD
description
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format Conference item
id oxford-uuid:554d6261-5881-44ce-a8a0-89b6ee9eaeea
institution University of Oxford
last_indexed 2024-03-06T22:21:47Z
publishDate 1989
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spelling oxford-uuid:554d6261-5881-44ce-a8a0-89b6ee9eaeea2022-03-26T16:43:09ZTHE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICONConference itemhttp://purl.org/coar/resource_type/c_5794uuid:554d6261-5881-44ce-a8a0-89b6ee9eaeeaSymplectic Elements at Oxford1989Wilshaw, PFell, T
spellingShingle Wilshaw, P
Fell, T
THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title_full THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title_fullStr THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title_full_unstemmed THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title_short THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
title_sort electronic properties of dislocations in silicon
work_keys_str_mv AT wilshawp theelectronicpropertiesofdislocationsinsilicon
AT fellt theelectronicpropertiesofdislocationsinsilicon
AT wilshawp electronicpropertiesofdislocationsinsilicon
AT fellt electronicpropertiesofdislocationsinsilicon