Data for 'Extremely low surface recombination in 1 Ωcm n-type monocrystalline silicon'
Data set embedded in Matlab figures representing the conductance-voltage spectra and interface state density (Dit) derived from it, effective lifetime (tau_eff) as a function minority carrier (Delta_n) and Surface potential, and surface recombination velocity and current calculated from lifetime da...
المؤلفون الرئيسيون: | Bonilla, R, Wilshaw, P |
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التنسيق: | Dataset |
اللغة: | English |
منشور في: |
University of Oxford
2016
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مواد مشابهة
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Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon
حسب: Bonilla Osorio, R, وآخرون
منشور في: (2016) -
An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si
حسب: Collett, K, وآخرون
منشور في: (2017) -
Data for "Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation"
حسب: Bonilla, R, وآخرون
منشور في: (2016) -
THE TEMPERATURE DEPENDENCE OF THE SURFACE POTENTIAL OF p-TYPE MONOCRYSTALLINE SILICON
حسب: V.K. Lyuev, وآخرون
منشور في: (2015-11-01) -
Stable field effect surface passivation of n-type Cz silicon
حسب: Bonilla, R, وآخرون
منشور في: (2013)