FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES
Field-emission scanning electron microscopy (FE-SEM) has been used to study several semiconductor multilayer heterostructures. Compositional superlattices based on GexSi1-x/Si and AlxGa1-xAs/GaAs have been studied in both cross-sectional and oblique plan-views after indentation. Secondary and backsc...
| Main Authors: | , , , , , |
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| Formato: | Conference item |
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1995
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