Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy
Main Authors: | , , , , , , , |
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Format: | Journal article |
Published: |
2006
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_version_ | 1797069650445467648 |
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author | Bae, M Shin, D Yi, SN Na, J Green, A Taylor, R Park, S Kang, N |
author_facet | Bae, M Shin, D Yi, SN Na, J Green, A Taylor, R Park, S Kang, N |
author_sort | Bae, M |
collection | OXFORD |
description | |
first_indexed | 2024-03-06T22:27:36Z |
format | Journal article |
id | oxford-uuid:572f7585-b1cd-485c-b4e3-3db562defbc4 |
institution | University of Oxford |
last_indexed | 2024-03-06T22:27:36Z |
publishDate | 2006 |
record_format | dspace |
spelling | oxford-uuid:572f7585-b1cd-485c-b4e3-3db562defbc42022-03-26T16:55:07ZSurface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:572f7585-b1cd-485c-b4e3-3db562defbc4Symplectic Elements at Oxford2006Bae, MShin, DYi, SNNa, JGreen, ATaylor, RPark, SKang, N |
spellingShingle | Bae, M Shin, D Yi, SN Na, J Green, A Taylor, R Park, S Kang, N Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title | Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title_full | Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title_fullStr | Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title_full_unstemmed | Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title_short | Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy |
title_sort | surface investigation of a cubic ain buffer layer and gan grown on si 111 and si 100 as revealed by atomic force microscopy |
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