Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy

Bibliographic Details
Main Authors:	Bae, M, Shin, D, Yi, SN, Na, J, Green, A, Taylor, R, Park, S, Kang, N
Format:	Journal article
Published:	2006

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