Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation

Bibliografski detalji
Glavni autori:	Lang, C, Cockayne, D, Nguyen-Manh, D
Format:	Journal article
Izdano:	2005

Slični predmeti

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
od: Lang, C, i dr.
Izdano: (2003)

The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
od: Lang, C, i dr.
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GeSi quantum dots: the effect of alloying on the shape transformation
od: Lang, C, i dr.
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Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
od: Lang, C, i dr.
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Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
od: Liao, X, i dr.
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Strain relaxation by alloying effects in Ge islands grown on Si(001)
od: Liao, X, i dr.
Izdano: (1999)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
od: Liao, X, i dr.
Izdano: (2004)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
od: Liao, X, i dr.
Izdano: (2000)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
od: Zou, J, i dr.
Izdano: (2002)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
od: Liao, X, i dr.
Izdano: (2002)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
od: Goldfarb, I, i dr.
Izdano: (1999)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
od: Merdzhanova T, i dr.
Izdano: (2009-01-01)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
od: Liao, X, i dr.
Izdano: (2001)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
od: Walz, J, i dr.
Izdano: (1999)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
od: Brehm M, i dr.
Izdano: (2010-01-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
od: Aleksei V. Kolesnikov, i dr.
Izdano: (2015-03-01)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
od: Brehm Moritz, i dr.
Izdano: (2011-01-01)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
od: Jian-Huan Wang, i dr.
Izdano: (2021-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
od: Ma Yingjie, i dr.
Izdano: (2011-01-01)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
od: Goldfarb, I, i dr.
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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
od: Bergamaschini R, i dr.
Izdano: (2010-01-01)

Morphology Analysis of Si Island Arrays on Si(001)
od: González-González A, i dr.
Izdano: (2010-01-01)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
od: Owen, J, i dr.
Izdano: (1997)

Stress and relief of misfit strain of Ge/Si(001)
od: Wedler, G, i dr.
Izdano: (1998)

First principles study of GeSi exchange mechanisms at the Si(001) surface
od: Zipoli, F, i dr.
Izdano: (2008)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
od: Cheng, H, i dr.
Izdano: (2000)

Competing growth mechanisms of Ge/Si(001) coherent clusters
od: Goldfarb, I, i dr.
Izdano: (1997)

Ion irradiation of GeSi Si strained-layer heterostructures
od: Glasko, J, i dr.
Izdano: (1999)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
od: Ewa Dumiszewska, i dr.
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The incommensurate nature of epitaxial titanium disilicide islands on Si(001)
od: Briggs, G, i dr.
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
od: Wedler, G, i dr.
Izdano: (1998)

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
od: Yong Du, i dr.
Izdano: (2021-04-01)

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
od: Vyacheslav A. Timofeev, i dr.
Izdano: (2017-06-01)

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
od: Yi-Ting Cheng, i dr.
Izdano: (2022-04-01)

A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
od: Zhong Zhenyang, i dr.
Izdano: (2011-01-01)

Limited-area growth of Ge and SiGe on Si
od: Kim, Meekyung, Ph. D. Massachusetts Institute of Technology
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Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
od: Keisuke Fukuda, i dr.
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Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices
od: M. Hijazi, i dr.
Izdano: (2016-06-01)

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
od: Glasko, J, i dr.
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Hydrogen diffusion on Si(001)
od: Owen, J, i dr.
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