Dynamics of single InGaN quantum dots
Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the...
Main Authors: | , , , , , , , , , |
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Format: | Conference item |
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2004
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_version_ | 1797069759503663104 |
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author | Taylor, R Robinson, J Rice, J Jarjour, A Smith, J Oliver, R Briggs, G Kappers, M Humphreys, C Arakawa, Y |
author_facet | Taylor, R Robinson, J Rice, J Jarjour, A Smith, J Oliver, R Briggs, G Kappers, M Humphreys, C Arakawa, Y |
author_sort | Taylor, R |
collection | OXFORD |
description | Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4-60 K decrease with increasing temperature. Different dots show similar lifetimes of similar to 2 ns. (C) 2003 Elsevier B.V. All rights reserved. |
first_indexed | 2024-03-06T22:29:13Z |
format | Conference item |
id | oxford-uuid:57bb01e9-4f8e-4186-b702-ba3bc53d2870 |
institution | University of Oxford |
last_indexed | 2024-03-06T22:29:13Z |
publishDate | 2004 |
record_format | dspace |
spelling | oxford-uuid:57bb01e9-4f8e-4186-b702-ba3bc53d28702022-03-26T16:58:26ZDynamics of single InGaN quantum dotsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:57bb01e9-4f8e-4186-b702-ba3bc53d2870Symplectic Elements at Oxford2004Taylor, RRobinson, JRice, JJarjour, ASmith, JOliver, RBriggs, GKappers, MHumphreys, CArakawa, YDecay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4-60 K decrease with increasing temperature. Different dots show similar lifetimes of similar to 2 ns. (C) 2003 Elsevier B.V. All rights reserved. |
spellingShingle | Taylor, R Robinson, J Rice, J Jarjour, A Smith, J Oliver, R Briggs, G Kappers, M Humphreys, C Arakawa, Y Dynamics of single InGaN quantum dots |
title | Dynamics of single InGaN quantum dots |
title_full | Dynamics of single InGaN quantum dots |
title_fullStr | Dynamics of single InGaN quantum dots |
title_full_unstemmed | Dynamics of single InGaN quantum dots |
title_short | Dynamics of single InGaN quantum dots |
title_sort | dynamics of single ingan quantum dots |
work_keys_str_mv | AT taylorr dynamicsofsingleinganquantumdots AT robinsonj dynamicsofsingleinganquantumdots AT ricej dynamicsofsingleinganquantumdots AT jarjoura dynamicsofsingleinganquantumdots AT smithj dynamicsofsingleinganquantumdots AT oliverr dynamicsofsingleinganquantumdots AT briggsg dynamicsofsingleinganquantumdots AT kappersm dynamicsofsingleinganquantumdots AT humphreysc dynamicsofsingleinganquantumdots AT arakaway dynamicsofsingleinganquantumdots |