PICOSECOND PHOTOLUMINESCENCE INTENSITY CORRELATION-MEASUREMENTS OF HOT CARRIERS IN GAAS/ALXGA1-XAS QUANTUM-WELLS

PICOSECOND PHOTOLUMINESCENCE INTENSITY CORRELATION-MEASUREMENTS OF HOT CARRIERS IN GAAS/ALXGA1-XAS QUANTUM-WELLS

عرض إصدارات أخرى (1)

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Depaula, A, Ryan, J, Eakin, H, Tatham, M, Taylor, R, Turberfield, A
التنسيق:	Journal article
منشور في:	1994

مواد مشابهة

Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells
حسب: de Paula, A, وآخرون
منشور في: (1994)

ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
حسب: Weber, G, وآخرون
منشور في: (1991)

MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.
حسب: Ryan, J, وآخرون
منشور في: (1984)

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
حسب: Y. C. Chang, وآخرون
منشور في: (2015-06-01)

MAGNETOOPTICAL STUDIES OF SCREENED EXCITONS IN GAAS/ALXGA1-XAS MODULATION-DOPED QUANTUM-WELLS
حسب: Henriques, A, وآخرون
منشور في: (1992)

Current Density of AlxGa1-xAs/GaAs Superlattice
حسب: Ahmed Z. Obaid, وآخرون
منشور في: (2024-09-01)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
حسب: Jiang, N, وآخرون
منشور في: (2012)

Far Infrared Modulated Photoluminescence (FIRM-PL) study of a 2-D electron gas in GaAs/AlxGa1-xAs heterojunctions and quantum wells
حسب: Nicholas, R, وآخرون
منشور في: (2000)

INFLUENCE OF LIGHT ON THE CONFINEMENT POTENTIAL OF GAAS/ALXGA1-XAS HETEROJUNCTIONS
حسب: Michels, J, وآخرون
منشور في: (1995)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
حسب: Oleg V. Devitsky, وآخرون
منشور في: (2022-05-01)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
حسب: Jiang, N, وآخرون
منشور في: (2012)

PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS
حسب: Ryan, J, وآخرون
منشور في: (1985)

Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
حسب: Ryan, J, وآخرون
منشور في: (1985)

Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers
حسب: Tan, H, وآخرون
منشور في: (1996)

TIME-RESOLVED PHOTOLUMINESCENCE FROM HOT TWO-DIMENSIONAL CARRIERS IN GAAS-GAALAS MQWS
حسب: Ryan, J, وآخرون
منشور في: (1986)

MAGNETIC FIELD-DEPENDENT HOT CARRIER RELAXATION IN GAAS QUANTUM WELLS
حسب: Turberfield, A
منشور في: (1988)

TIME-RESOLVED PHOTOLUMINESCENCE OF TWO-DIMENSIONAL HOT CARRIERS IN GAAS-ALGAAS HETEROSTRUCTURES
حسب: Ryan, J, وآخرون
منشور في: (1984)

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
حسب: Ryan, J, وآخرون
منشور في: (1984)

INVESTIGATION OF INTER-VALLEY SCATTERING AND HOT PHONON DYNAMICS IN GAAS QUANTUM WELLS USING FEMTOSECOND LUMINESCENCE INTENSITY CORRELATION
حسب: Depaula, A, وآخرون
منشور في: (1989)

HOT-CARRIER PHOTOLUMINESCENCE FROM GAAS V-GROOVE QUANTUM WIRES
حسب: Maciel, A, وآخرون
منشور في: (1994)

BULK AND TRANSFER DOPING EFFECTS IN ALXGA1-XAS LAYERS GROWN ON SEMI-INSULATING GAAS SUBSTRATES
حسب: Nicholas, R, وآخرون
منشور في: (1984)

Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices
حسب: Castell, M, وآخرون
منشور في: (1995)

Piezoelectric effects of single-crystal GaAs and multi-layered AlxGa1-xAs/GaAs material measured by the Michelson interferometer
حسب: Patara Aiyarak, وآخرون
منشور في: (2003-09-01)

PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION AND AUGER RECOMBINATION IN GASB
حسب: Snow, P, وآخرون
منشور في: (1989)

Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type
حسب: Yana Suchikova, وآخرون
منشور في: (2022-12-01)

A far infrared modulated photoluminescence (FIRM-PL) study of cyclotron resonance in a 2D electron gas in GaAs/AlxGa1-xAs heterojunctions
حسب: Chang, C, وآخرون
منشور في: (1999)

Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
حسب: Bogdanov, E., وآخرون
منشور في: (2011-02-01)

ION DAMAGE BUILDUP AND AMORPHIZATION PROCESSES IN ALXGA1-XAS
حسب: Tan, H, وآخرون
منشور في: (1995)

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
حسب: Qi Wang, وآخرون
منشور في: (2013-07-01)

Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate
حسب: Aldis ŠILĖNAS, وآخرون
منشور في: (2014-06-01)

Effects of hills, morphology, electromagnetic fields, temperature, pressure, and aluminum concentration on the second harmonic generation of GaAs/AlxGa1-xAs elliptical quantum rings
حسب: N. Benzerroug, وآخرون
منشور في: (2024-08-01)

HOT ELECTRON RELAXATION AND TRAPPING IN MODULATION-DOPED GaAs/GaA1As MULTIPLE QUANTUM WELL HETEROSTRUCTURES.
حسب: Ryan, J, وآخرون
منشور في: (1985)

ENERGY RELAXATION IN PARA-GAAS AND NORMAL-GAAS QUANTUM WELLS - CONFINEMENT EFFECTS
حسب: Tatham, M, وآخرون
منشور في: (1988)

Propriedades elétricas da liga AlxGa1-xAs dopada com Silício.
حسب: Ivan Frederico Lupiano Dias, وآخرون
منشور في: (2004-12-01)

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD
حسب: Roberto Saúl Castillo-Ojeda, وآخرون
منشور في: (2017-03-01)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
حسب: Lobo, C, وآخرون
منشور في: (2000)

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
حسب: Ryan, J, وآخرون
منشور في: (1986)

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt
حسب: Olga Khvostikova, وآخرون
منشور في: (2024-01-01)

INTERSUBBAND AND INTRASUBBAND RELAXATION OF HOT CARRIERS IN QUANTUM-WELLS PROBED BY TIME-RESOLVED RAMAN-SPECTROSCOPY
حسب: Tatham, M, وآخرون
منشور في: (1992)

INTENSITY CORRELATION-MEASUREMENT OF TIME-RESOLVED PHOTOLUMINESCENCE FROM GAAS MQWS
حسب: Eakin, H, وآخرون
منشور في: (1988)