Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing...
| Glavni autori: | , , , , , , , , , |
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| Format: | Journal article |
| Jezik: | English |
| Izdano: |
2012
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