MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

Manylion Llyfryddiaeth
Prif Awduron:	Ourmazd, A, Wilshaw, P, Cripps, R
Fformat:	Journal article
Cyhoeddwyd:	1982

Eitemau Tebyg

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1985)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1986)

An SEM EBIC study of the electronic properties of dislocations in silicon
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1984)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1991)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1993)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
gan: Galloway, S, et al.
Cyhoeddwyd: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
gan: Wilshaw, P
Cyhoeddwyd: (1989)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
gan: Blumtritt, H, et al.
Cyhoeddwyd: (1989)

Impurity locking of dislocations in silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2004)

On the locking of dislocations by oxygen in silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1982)

Locking of dislocations by oxygen in Cz-silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (1999)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
gan: Alpass, C, et al.
Cyhoeddwyd: (2007)

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
gan: Breese, M, et al.
Cyhoeddwyd: (1998)

Understanding and optimising EBIC pn-junction characterisation from modelling insights
gan: Zhou, R, et al.
Cyhoeddwyd: (2020)

Dislocation locking by nitrogen impurities in FZ-silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2003)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
gan: Alpass, C, et al.
Cyhoeddwyd: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
gan: Alpass, C, et al.
Cyhoeddwyd: (2008)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
gan: Senkader, S, et al.
Cyhoeddwyd: (2004)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

The influence of nitrogen on dislocation locking in float-zone silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2005)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
gan: Senkader, S, et al.
Cyhoeddwyd: (2002)

THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS
gan: Hildebrandt, S, et al.
Cyhoeddwyd: (1989)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

Device parameters characterization with the use of EBIC
gan: Oka Kurniawan
Cyhoeddwyd: (2010)

Junction depth & defect characterization with the use of EBIC
gan: Phua, Poh Chin.
Cyhoeddwyd: (2008)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2005)