MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

Bibliografiset tiedot
Päätekijät:	Ourmazd, A, Wilshaw, P, Cripps, R
Aineistotyyppi:	Journal article
Julkaistu:	1982

Samankaltaisia teoksia

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
Tekijä: Ourmazd, A, et al.
Julkaistu: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
Tekijä: Ourmazd, A, et al.
Julkaistu: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
Tekijä: Wilshaw, P, et al.
Julkaistu: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
Tekijä: Wilshaw, P, et al.
Julkaistu: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
Tekijä: Wilshaw, P, et al.
Julkaistu: (1985)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
Tekijä: Wilshaw, P, et al.
Julkaistu: (1986)

An SEM EBIC study of the electronic properties of dislocations in silicon
Tekijä: Wilshaw, P, et al.
Julkaistu: (1984)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
Tekijä: Wilshaw, P, et al.
Julkaistu: (1991)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
Tekijä: Fell, T, et al.
Julkaistu: (1993)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
Tekijä: Galloway, S, et al.
Julkaistu: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
Tekijä: Fell, T, et al.
Julkaistu: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
Tekijä: Fell, T, et al.
Julkaistu: (1991)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
Tekijä: Ourmazd, A, et al.
Julkaistu: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
Tekijä: Ourmazd, A, et al.
Julkaistu: (1983)

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
Tekijä: Wilshaw, P
Julkaistu: (1989)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
Tekijä: Blumtritt, H, et al.
Julkaistu: (1989)

Impurity locking of dislocations in silicon
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On the locking of dislocations by oxygen in silicon
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
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Locking of dislocations by oxygen in Cz-silicon
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Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
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A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
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Tekijä: Alpass, C, et al.
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Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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The influence of nitrogen on dislocation locking in float-zone silicon
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The influence of nitrogen on dislocation locking in float-zone silicon
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
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THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS
Tekijä: Hildebrandt, S, et al.
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Tekijä: Murphy, J, et al.
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
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