MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Ourmazd, A, Wilshaw, P, Cripps, R
Formáid:	Journal article
Foilsithe / Cruthaithe:	1982

Míreanna comhchosúla

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
de réir: Ourmazd, A, et al.
Foilsithe / Cruthaithe: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
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SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
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SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
de réir: Wilshaw, P, et al.
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NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
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An SEM EBIC study of the electronic properties of dislocations in silicon
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EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
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EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
de réir: Fell, T, et al.
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AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
de réir: Fell, T, et al.
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
de réir: Fell, T, et al.
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
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THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
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THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
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ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
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Impurity locking of dislocations in silicon
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On the locking of dislocations by oxygen in silicon
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
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Locking of dislocations by oxygen in Cz-silicon
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Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
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A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
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Understanding and optimising EBIC pn-junction characterisation from modelling insights
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Dislocation locking by nitrogen impurities in FZ-silicon
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Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
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Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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The influence of nitrogen on dislocation locking in float-zone silicon
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The influence of nitrogen on dislocation locking in float-zone silicon
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
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THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS
de réir: Hildebrandt, S, et al.
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
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Device parameters characterization with the use of EBIC
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Junction depth & defect characterization with the use of EBIC
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
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