The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth

مواد مشابهة

• Reduction of dislocation mobility in GexSi1-x epilayers
  حسب: Jurkschat, K, وآخرون
  منشور في: (1996)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  حسب: Glasko, J, وآخرون
  منشور في: (1997)
• A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
  حسب: Hirsch, P
  منشور في: (1997)
• The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
  حسب: Glasko, J, وآخرون
  منشور في: (1996)
• Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
  حسب: Brehm Moritz, وآخرون
  منشور في: (2011-01-01)