The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth
Main Authors: | Goldfarb, I, Briggs, G |
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Format: | Conference item |
Udgivet: |
1999
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Lignende værker
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A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
af: Hirsch, P
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The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
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Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
af: Brehm Moritz, et al.
Udgivet: (2011-01-01)