Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results ar...
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Journal article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
American Physical Society
2007
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| Konular: |
| _version_ | 1826275126301163520 |
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| author | Jarjour, A Oliver, R Tahraoui, A Kappers, M Humphreys, C Taylor, R |
| author_facet | Jarjour, A Oliver, R Tahraoui, A Kappers, M Humphreys, C Taylor, R |
| author_sort | Jarjour, A |
| collection | OXFORD |
| description | We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy. |
| first_indexed | 2024-03-06T22:53:57Z |
| format | Journal article |
| id | oxford-uuid:5fbfe905-6b78-4cdb-878a-36a0f5bff2cd |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T22:53:57Z |
| publishDate | 2007 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | oxford-uuid:5fbfe905-6b78-4cdb-878a-36a0f5bff2cd2022-03-26T17:48:51ZControl of the oscillator strength of the exciton in a single InGaN-GaN quantum dotJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:5fbfe905-6b78-4cdb-878a-36a0f5bff2cdPhysicsCondensed Matter PhysicsEnglishOxford University Research Archive - ValetAmerican Physical Society2007Jarjour, AOliver, RTahraoui, AKappers, MHumphreys, CTaylor, RWe report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy. |
| spellingShingle | Physics Condensed Matter Physics Jarjour, A Oliver, R Tahraoui, A Kappers, M Humphreys, C Taylor, R Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title | Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title_full | Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title_fullStr | Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title_full_unstemmed | Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title_short | Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot |
| title_sort | control of the oscillator strength of the exciton in a single ingan gan quantum dot |
| topic | Physics Condensed Matter Physics |
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