Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results ar...
| প্রধান লেখক: | , , , , , |
|---|---|
| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
American Physical Society
2007
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| বিষয়গুলি: |
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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
প্রকাশিত 2007
Journal article