Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results ar...
| Hauptverfasser: | , , , , , |
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| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
American Physical Society
2007
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| Schlagworte: |
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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
Veröffentlicht 2007
Journal article