Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results ar...
| Main Authors: | , , , , , |
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| 格式: | Journal article |
| 语言: | English |
| 出版: |
American Physical Society
2007
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| 主题: |