Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are dis...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2003
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| _version_ | 1826275352274534400 |
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| author | Taylor, R Smith, J Rice, J Ryan, J Someya, T Arakawa, Y |
| author_facet | Taylor, R Smith, J Rice, J Ryan, J Someya, T Arakawa, Y |
| author_sort | Taylor, R |
| collection | OXFORD |
| description | The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. © 2002 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T22:57:25Z |
| format | Journal article |
| id | oxford-uuid:60e89c03-b84e-40f6-a6cb-10cac906aefb |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T22:57:25Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | oxford-uuid:60e89c03-b84e-40f6-a6cb-10cac906aefb2022-03-26T17:56:13ZTime-resolved gain dynamics in InGaN MQWs using a Kerr gateJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:60e89c03-b84e-40f6-a6cb-10cac906aefbEnglishSymplectic Elements at Oxford2003Taylor, RSmith, JRice, JRyan, JSomeya, TArakawa, YThe Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. © 2002 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Taylor, R Smith, J Rice, J Ryan, J Someya, T Arakawa, Y Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title | Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title_full | Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title_fullStr | Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title_full_unstemmed | Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title_short | Time-resolved gain dynamics in InGaN MQWs using a Kerr gate |
| title_sort | time resolved gain dynamics in ingan mqws using a kerr gate |
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