A study of oxygen dislocation interactions in CZ-Si
The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated for different oxygen concentrations and annealing conditions. It has been r...
| Main Authors: | , , , |
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| Format: | Conference item |
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Elsevier
2000
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