Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates
Mn/Cu heterostructures thermally evaporated onto SiO and, subsequently, annealed were investigated by transmission electron microscopy related techniques in order to study the diffusion interactions which lead to barrier layer formation. Energy dispersive x-ray spectroscopy and electron energy loss...
| Principais autores: | , , , , , , |
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| Formato: | Journal article |
| Publicado em: |
2011
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| _version_ | 1826275716409327616 |
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| author | Lozano, J Bogan, J Brennan, B Hughes, G Lozano-Perez, S Nellist, P Wang, Y |
| author_facet | Lozano, J Bogan, J Brennan, B Hughes, G Lozano-Perez, S Nellist, P Wang, Y |
| author_sort | Lozano, J |
| collection | OXFORD |
| description | Mn/Cu heterostructures thermally evaporated onto SiO and, subsequently, annealed were investigated by transmission electron microscopy related techniques in order to study the diffusion interactions which lead to barrier layer formation. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy provide evidence for the interdiffusion between the Mn and Cu layers following a 450°C anneal, where the Mn diffuses toward the surface of the structure, while Cu diffuses toward the Mn/ SiO but does not propagate into the dielectric. The chemical composition of the 2-3 nm interfacial layer is primarily a mixture of +2 and +3 Mn valences, in good agreement with previously reported results. © 2011 American Institute of Physics. |
| first_indexed | 2024-03-06T23:03:01Z |
| format | Journal article |
| id | oxford-uuid:62d201fa-7370-4b58-9ea3-ef06aa8c6493 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:03:01Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:62d201fa-7370-4b58-9ea3-ef06aa8c64932022-03-26T18:08:44ZInterdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substratesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:62d201fa-7370-4b58-9ea3-ef06aa8c6493Symplectic Elements at Oxford2011Lozano, JBogan, JBrennan, BHughes, GLozano-Perez, SNellist, PWang, YMn/Cu heterostructures thermally evaporated onto SiO and, subsequently, annealed were investigated by transmission electron microscopy related techniques in order to study the diffusion interactions which lead to barrier layer formation. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy provide evidence for the interdiffusion between the Mn and Cu layers following a 450°C anneal, where the Mn diffuses toward the surface of the structure, while Cu diffuses toward the Mn/ SiO but does not propagate into the dielectric. The chemical composition of the 2-3 nm interfacial layer is primarily a mixture of +2 and +3 Mn valences, in good agreement with previously reported results. © 2011 American Institute of Physics. |
| spellingShingle | Lozano, J Bogan, J Brennan, B Hughes, G Lozano-Perez, S Nellist, P Wang, Y Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title | Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title_full | Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title_fullStr | Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title_full_unstemmed | Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title_short | Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO substrates |
| title_sort | interdiffusion and barrier layer formation in thermally evaporated mn cu heterostructures on sio substrates |
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