OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES

Bibliographic Details
Main Authors:	Lakrimi, M, Martin, R, Mason, N, Nicholas, R, Walker, P
Format:	Conference item
Published:	1992

Similar Items

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
by: Lakrimi, M, et al.
Published: (1991)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
by: Haywood, S, et al.
Published: (1991)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
by: Lakrimi, M, et al.
Published: (1991)

Optical probing of the minigap in InAs/GaSb superlattices
by: Poulter, A, et al.
Published: (1998)

Intersubband transitions in InAs GaSb semimetallic superlattices
by: Poulter, A, et al.
Published: (1999)

Optical probing of the minigap in InAs/GaSb superlattices
by: Poulter, A, et al.
Published: (1999)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
by: Booker, G, et al.
Published: (1994)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
by: Booker, G, et al.
Published: (1997)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
by: Booker, G, et al.
Published: (1995)

Long wavelength photoresponse of short period InAs/GaSb superlattices
by: Lakrimi, M, et al.
Published: (1995)

Intersubband transitions in InAs/GaSb semi-metallic superlattices
by: Poulter, A, et al.
Published: (1998)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
by: Warburton, R, et al.
Published: (1991)

GROWTH OF GASB BY MOVPE
by: Haywood, S, et al.
Published: (1988)

Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy
by: Poulter, A, et al.
Published: (1998)

Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
by: Lakrimi, M, et al.
Published: (1997)

Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field
by: De Meester, R, et al.
Published: (2000)

GASB HETEROSTRUCTURES GROWN BY MOVPE
by: Chidley, E, et al.
Published: (1988)

Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
by: Lakrimi, M, et al.
Published: (1998)

INTERFACE STUDIES OF INAS/GASB SUPERLATTICES BY RAMAN-SCATTERING
by: Lopez, C, et al.
Published: (1992)

Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
by: Daly, MS, et al.
Published: (1996)

Magnetoresistance of vertical transport in InAs/GaSb superlattices
by: Broadley, V, et al.
Published: (2002)

[001]-ORIENTED AND PIEZOELECTRIC-[111]-ORIENTED INAS/GASB STRUCTURES UNDER HYDROSTATIC-PRESSURE
by: Symons, D, et al.
Published: (1994)

CYCLOTRON AND INTERSUBBAND RESONANCE STUDIES IN [001] AND PIEZOELECTRIC [111] INAS/(GA,IN)SB SUPERLATTICES
by: Lakrimi, M, et al.
Published: (1994)

HIGH MAGNETIC-FIELD STUDIES OF THE CROSSED-GAP SUPERLATTICE SYSTEM INAS/GASB
by: Nicholas, R, et al.
Published: (1993)

Superlattice magnetophonon resonances in strongly coupled InAs/GaSb superlattices
by: Deacon, R, et al.
Published: (2007)

Miniband transport and stark-cyclotron-resonance in InAs/GaSb superlattices
by: Hales, V, et al.
Published: (2001)

High field magnetotransport in strongly coupled InAs/GaSb superlattices
by: Deacon, R, et al.
Published: (2004)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
by: D. Benyahia, et al.
Published: (2018-07-01)

The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
by: Jiabo Liu, et al.
Published: (2023-03-01)

ULTRA-HIGH MAGNETIC-FIELD CYCLOTRON-RESONANCE OF ZERO-GAP INAS/GASB SUPERLATTICES
by: Barnes, D, et al.
Published: (1993)

Stark magnetophonon resonance observation in InAs/GaSb superlattices
by: Deacon, R, et al.
Published: (2007)

TEMPERATURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
by: Symons, D, et al.
Published: (1995)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
by: Akihiro Ohtake, et al.
Published: (2018-11-01)

Magnetic breakdown in the semimetallic InAs/GaSb system
by: Symons, D, et al.
Published: (1998)

Magnetic breakdown in the semimetallic InAs/GaSb system
by: Symons, D, et al.
Published: (1998)

Interface composition dependence of the band offset in InAs/GaSb
by: Daly, MS, et al.
Published: (1996)

Interface composition dependence of the band offset in InAs/GaSb
by: Daly, MS, et al.
Published: (1996)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
by: Norman, A, et al.
Published: (1997)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
by: Zulkafli Othaman, author, et al.
Published: (2007)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)