THE CHARACTERIZATION OF SILICON SURFACES BY TIME-OF-FLIGHT ATOM PROBE ANALYSIS
New results are presented on the analysis of silicon surfaces in a Time-of-Flight Atom Probe. Comparison is made between the chemical data obtained from conventional voltage pulse and laser pulse desorption. © 1982.
| 主要な著者: | , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
1982
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| 要約: | New results are presented on the analysis of silicon surfaces in a Time-of-Flight Atom Probe. Comparison is made between the chemical data obtained from conventional voltage pulse and laser pulse desorption. © 1982. |
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