III-V semiconductor nanowires for optoelectronic device applications

III-V semiconductor nanowires for optoelectronic device applications

Εμφάνιση άλλων εκδόσεων (2)

Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exp...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Joyce, H, Gao, Q, Hoe Tan, H, Jagadish, C, Kim, Y, Zou, J, Smith, L, Jackson, H, Yarrison-Rice, J, Parkinson, P, Johnston, M
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	2011

Παρόμοια τεκμήρια

III-V semiconductor nanowires for optoelectronic device applications
ανά: Joyce, H, κ.ά.
Έκδοση: (2011)

III-V compound semiconductor nanowires for optoelectronic device applications
ανά: Gao, Q, κ.ά.
Έκδοση: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
ανά: Gao, Q, κ.ά.
Έκδοση: (2009)

Compound semiconductor nanowires for optoelectronic device applications
ανά: Gao, Q, κ.ά.
Έκδοση: (2011)

III-V semiconductor nanowires for optoelectronic device applications
ανά: Mokkapati, S, κ.ά.
Έκδοση: (2013)

Nanowires for optoelectronic device applications
ανά: Gao, Q, κ.ά.
Έκδοση: (2009)

III-V compound semiconductor nanowires
ανά: Joyce, H, κ.ά.
Έκδοση: (2009)

III-V nanowires for optoelectronic applications
ανά: Tan, H, κ.ά.
Έκδοση: (2012)

III-V nanowires for optoelectronic applications
ανά: Tan, H, κ.ά.
Έκδοση: (2013)

III-V compound semiconductor nanowires
ανά: Paiman, S, κ.ά.
Έκδοση: (2009)

Quantum dots and nanowires for optoelectronic device applications
ανά: Gao, Q, κ.ά.
Έκδοση: (2006)

Growth, structural and optical properties of III-V nanowires for optoelectronic applications
ανά: Joyce, H, κ.ά.
Έκδοση: (2007)

Unexpected benefits of rapid growth rate for III-V nanowires.
ανά: Joyce, H, κ.ά.
Έκδοση: (2009)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
ανά: Joyce, H, κ.ά.
Έκδοση: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
ανά: Joyce, H, κ.ά.
Έκδοση: (2011)

An ultrafast switchable terahertz polarization modulator based on III--V semiconductor nanowires
ανά: Baig, S, κ.ά.
Έκδοση: (2017)

Optoelectronic properties of GaAs nanowire photodetector
ανά: Wang, H, κ.ά.
Έκδοση: (2012)

Optical properties of single InP and GaAs nanowire heterostructures
ανά: Jackson, H, κ.ά.
Έκδοση: (2008)

Ultrafast dynamics of exciton formation in semiconductor nanowires.
ανά: Yong, C, κ.ά.
Έκδοση: (2012)

MOCVD-grown indium phosphide nanowires for optoelectronics
ανά: Paiman, Suriati, κ.ά.
Έκδοση: (2014)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
ανά: Joyce, H, κ.ά.
Έκδοση: (2008)

Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
ανά: Joyce, HJ, κ.ά.
Έκδοση: (2018)

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.
ανά: Mokkapati, S, κ.ά.
Έκδοση: (2012)

Direct-write non-linear photolithography for semiconductor nanowire characterization.
ανά: Parkinson, P, κ.ά.
Έκδοση: (2012)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
ανά: Perera, S, κ.ά.
Έκδοση: (2008)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
ανά: Titova, L, κ.ά.
Έκδοση: (2006)

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
ανά: Joyce, H, κ.ά.
Έκδοση: (2008)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
ανά: Titova, L, κ.ά.
Έκδοση: (2007)

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
ανά: Mishra, A, κ.ά.
Έκδοση: (2007)

Novel growth and properties of GaAs nanowires on Si substrates.
ανά: Kang, J, κ.ά.
Έκδοση: (2010)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
ανά: Kang, J, κ.ά.
Έκδοση: (2011)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
ανά: Kang, J, κ.ά.
Έκδοση: (2010)

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
ανά: Joyce, H, κ.ά.
Έκδοση: (2007)

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
ανά: Parkinson, P, κ.ά.
Έκδοση: (2012)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
ανά: Hoang, T, κ.ά.
Έκδοση: (2007)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
ανά: Smith, L, κ.ά.
Έκδοση: (2007)

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
ανά: Kang, J, κ.ά.
Έκδοση: (2010)

Optoelectronic properties of semiconductor nanowires in the infrared regime
ανά: Sterzl, S
Έκδοση: (2020)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
ανά: Joyce, H, κ.ά.
Έκδοση: (2007)

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
ανά: Joyce, H, κ.ά.
Έκδοση: (2013)