III-V semiconductor nanowires for optoelectronic device applications

III-V semiconductor nanowires for optoelectronic device applications

Taispeáin leaganacha eile (2)

Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exp...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Joyce, H, Gao, Q, Hoe Tan, H, Jagadish, C, Kim, Y, Zou, J, Smith, L, Jackson, H, Yarrison-Rice, J, Parkinson, P, Johnston, M
Formáid:	Journal article
Teanga:	English
Foilsithe / Cruthaithe:	2011

Míreanna comhchosúla

III-V semiconductor nanowires for optoelectronic device applications
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2011)

III-V compound semiconductor nanowires for optoelectronic device applications
de réir: Gao, Q, et al.
Foilsithe / Cruthaithe: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
de réir: Gao, Q, et al.
Foilsithe / Cruthaithe: (2009)

Compound semiconductor nanowires for optoelectronic device applications
de réir: Gao, Q, et al.
Foilsithe / Cruthaithe: (2011)

III-V semiconductor nanowires for optoelectronic device applications
de réir: Mokkapati, S, et al.
Foilsithe / Cruthaithe: (2013)

Nanowires for optoelectronic device applications
de réir: Gao, Q, et al.
Foilsithe / Cruthaithe: (2009)

III-V compound semiconductor nanowires
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2009)

III-V nanowires for optoelectronic applications
de réir: Tan, H, et al.
Foilsithe / Cruthaithe: (2012)

III-V nanowires for optoelectronic applications
de réir: Tan, H, et al.
Foilsithe / Cruthaithe: (2013)

III-V compound semiconductor nanowires
de réir: Paiman, S, et al.
Foilsithe / Cruthaithe: (2009)

Quantum dots and nanowires for optoelectronic device applications
de réir: Gao, Q, et al.
Foilsithe / Cruthaithe: (2006)

Growth, structural and optical properties of III-V nanowires for optoelectronic applications
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2007)

Unexpected benefits of rapid growth rate for III-V nanowires.
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2009)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2011)

An ultrafast switchable terahertz polarization modulator based on III--V semiconductor nanowires
de réir: Baig, S, et al.
Foilsithe / Cruthaithe: (2017)

Optoelectronic properties of GaAs nanowire photodetector
de réir: Wang, H, et al.
Foilsithe / Cruthaithe: (2012)

Optical properties of single InP and GaAs nanowire heterostructures
de réir: Jackson, H, et al.
Foilsithe / Cruthaithe: (2008)

Ultrafast dynamics of exciton formation in semiconductor nanowires.
de réir: Yong, C, et al.
Foilsithe / Cruthaithe: (2012)

MOCVD-grown indium phosphide nanowires for optoelectronics
de réir: Paiman, Suriati, et al.
Foilsithe / Cruthaithe: (2014)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2008)

Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
de réir: Joyce, HJ, et al.
Foilsithe / Cruthaithe: (2018)

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.
de réir: Mokkapati, S, et al.
Foilsithe / Cruthaithe: (2012)

Direct-write non-linear photolithography for semiconductor nanowire characterization.
de réir: Parkinson, P, et al.
Foilsithe / Cruthaithe: (2012)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
de réir: Perera, S, et al.
Foilsithe / Cruthaithe: (2008)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
de réir: Titova, L, et al.
Foilsithe / Cruthaithe: (2006)

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2008)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
de réir: Titova, L, et al.
Foilsithe / Cruthaithe: (2007)

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
de réir: Mishra, A, et al.
Foilsithe / Cruthaithe: (2007)

Novel growth and properties of GaAs nanowires on Si substrates.
de réir: Kang, J, et al.
Foilsithe / Cruthaithe: (2010)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
de réir: Kang, J, et al.
Foilsithe / Cruthaithe: (2011)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
de réir: Kang, J, et al.
Foilsithe / Cruthaithe: (2010)

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2007)

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
de réir: Parkinson, P, et al.
Foilsithe / Cruthaithe: (2012)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
de réir: Hoang, T, et al.
Foilsithe / Cruthaithe: (2007)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
de réir: Smith, L, et al.
Foilsithe / Cruthaithe: (2007)

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
de réir: Kang, J, et al.
Foilsithe / Cruthaithe: (2010)

Optoelectronic properties of semiconductor nanowires in the infrared regime
de réir: Sterzl, S
Foilsithe / Cruthaithe: (2020)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2007)

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
de réir: Joyce, H, et al.
Foilsithe / Cruthaithe: (2013)