III-V semiconductor nanowires for optoelectronic device applications

III-V semiconductor nanowires for optoelectronic device applications

Pokaži ostale verzije (2)

Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exp...

Bibliografski detalji
Glavni autori:	Joyce, H, Gao, Q, Hoe Tan, H, Jagadish, C, Kim, Y, Zou, J, Smith, L, Jackson, H, Yarrison-Rice, J, Parkinson, P, Johnston, M
Format:	Journal article
Jezik:	English
Izdano:	2011

Slični predmeti

III-V semiconductor nanowires for optoelectronic device applications
od: Joyce, H, i dr.
Izdano: (2011)

III-V compound semiconductor nanowires for optoelectronic device applications
od: Gao, Q, i dr.
Izdano: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
od: Gao, Q, i dr.
Izdano: (2009)

Compound semiconductor nanowires for optoelectronic device applications
od: Gao, Q, i dr.
Izdano: (2011)

III-V semiconductor nanowires for optoelectronic device applications
od: Mokkapati, S, i dr.
Izdano: (2013)

Nanowires for optoelectronic device applications
od: Gao, Q, i dr.
Izdano: (2009)

III-V compound semiconductor nanowires
od: Joyce, H, i dr.
Izdano: (2009)

III-V nanowires for optoelectronic applications
od: Tan, H, i dr.
Izdano: (2012)

III-V nanowires for optoelectronic applications
od: Tan, H, i dr.
Izdano: (2013)

III-V compound semiconductor nanowires
od: Paiman, S, i dr.
Izdano: (2009)

Quantum dots and nanowires for optoelectronic device applications
od: Gao, Q, i dr.
Izdano: (2006)

Growth, structural and optical properties of III-V nanowires for optoelectronic applications
od: Joyce, H, i dr.
Izdano: (2007)

Unexpected benefits of rapid growth rate for III-V nanowires.
od: Joyce, H, i dr.
Izdano: (2009)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
od: Joyce, H, i dr.
Izdano: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
od: Joyce, H, i dr.
Izdano: (2011)

An ultrafast switchable terahertz polarization modulator based on III--V semiconductor nanowires
od: Baig, S, i dr.
Izdano: (2017)

Optoelectronic properties of GaAs nanowire photodetector
od: Wang, H, i dr.
Izdano: (2012)

Optical properties of single InP and GaAs nanowire heterostructures
od: Jackson, H, i dr.
Izdano: (2008)

Ultrafast dynamics of exciton formation in semiconductor nanowires.
od: Yong, C, i dr.
Izdano: (2012)

MOCVD-grown indium phosphide nanowires for optoelectronics
od: Paiman, Suriati, i dr.
Izdano: (2014)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
od: Joyce, H, i dr.
Izdano: (2008)

Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
od: Joyce, HJ, i dr.
Izdano: (2018)

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.
od: Mokkapati, S, i dr.
Izdano: (2012)

Direct-write non-linear photolithography for semiconductor nanowire characterization.
od: Parkinson, P, i dr.
Izdano: (2012)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
od: Perera, S, i dr.
Izdano: (2008)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
od: Titova, L, i dr.
Izdano: (2006)

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
od: Joyce, H, i dr.
Izdano: (2008)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
od: Titova, L, i dr.
Izdano: (2007)

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
od: Mishra, A, i dr.
Izdano: (2007)

Novel growth and properties of GaAs nanowires on Si substrates.
od: Kang, J, i dr.
Izdano: (2010)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
od: Kang, J, i dr.
Izdano: (2011)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
od: Kang, J, i dr.
Izdano: (2010)

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
od: Joyce, H, i dr.
Izdano: (2007)

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
od: Parkinson, P, i dr.
Izdano: (2012)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
od: Hoang, T, i dr.
Izdano: (2007)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
od: Smith, L, i dr.
Izdano: (2007)

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
od: Kang, J, i dr.
Izdano: (2010)

Optoelectronic properties of semiconductor nanowires in the infrared regime
od: Sterzl, S
Izdano: (2020)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
od: Joyce, H, i dr.
Izdano: (2007)

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
od: Joyce, H, i dr.
Izdano: (2013)