Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near ELO. In...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1999
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Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Published 1999
Conference item