Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

Show other versions (1)

Bibliographic Details
Main Authors:	Robinson, J, Rice, J, Lee, K, Na, J, Taylor, R, Hasko, D, Oliver, R, Kappers, M, Humphreys, C, Briggs, G
Format:	Journal article
Published:	2005

Similar Items

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
by: Robinson, J, et al.
Published: (2005)

Simulation of the quantum-confined stark effect in a single InGaN quantum dot
by: Lee, K, et al.
Published: (2004)

Dynamics of single InGaN quantum dots
by: Taylor, R, et al.
Published: (2004)

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
by: Jarjour, A, et al.
Published: (2008)

Temporal variation in photoluminescence from single InGaN quantum dots
by: Rice, J, et al.
Published: (2004)

Time-resolved dynamics in single InGaN quantum dots
by: Robinson, J, et al.
Published: (2003)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
by: Rice, J, et al.
Published: (2004)

Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots
by: Rice, J, et al.
Published: (2004)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
by: Oliver, R, et al.
Published: (2003)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
by: Robinson, J, et al.
Published: (2004)

Time-resolved dynamics in single InGaN quantum dots
by: Taylor, R, et al.
Published: (2005)

Electrically driven single InGaN/GaN quantum dot emission
by: Jarjour, A, et al.
Published: (2008)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
by: Oliver, R, et al.
Published: (2003)

Two-photon absorption from single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2006)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
by: Jarjour, A, et al.
Published: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
by: Park, Y, et al.
Published: (2010)

Luminescence properties of isolated InGaN/GaN quantum dots
by: Martin, R, et al.
Published: (2005)

Growth and optical characterisation of multilayers of InGaN quantum dots
by: Zhu, T, et al.
Published: (2012)

Non-linear excitation and correlation studies of single InGaN quantum dots
by: Collins, D, et al.
Published: (2009)

Non-linear excitation and correlation studies of single InGaN quantum dots
by: Collins, D, et al.
Published: (2009)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
by: Collins, D, et al.
Published: (2009)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Biexciton and exciton dynamics in single InGaN quantum dots
by: Rice, J, et al.
Published: (2005)

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
by: Taylor, R, et al.
Published: (2005)

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
by: Oliver, R, et al.
Published: (2008)

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
by: Edwards, P, et al.
Published: (2004)

InGaN super-lattice growth for fabrication of quantum dot containing microdisks
by: El-Ella, H, et al.
Published: (2011)

InGaN super-lattice growth for fabrication of quantum dot containing microdisks
by: El-Ella, H, et al.
Published: (2011)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
by: George Christian, et al.
Published: (2018-09-01)

Progress in the optical studies of single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

Microstructural origins of localization in InGaN quantum wells
by: Oliver, R, et al.
Published: (2010)

Growth modes in heteroepitaxy of InGaN on GaN
by: Oliver, R, et al.
Published: (2005)

Carrier localization mechanisms in InGaN/GaN quantum wells
by: Watson-Parris, D, et al.
Published: (2011)

Temperature-dependent fine structure splitting in InGaN quantum dots
by: Wang, T, et al.
Published: (2017)

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
by: Oliver, R, et al.
Published: (2013)

Sub-wavelength Al mask apertures for addressing individual InGaN quantum dots
by: Yasin, S, et al.
Published: (2004)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
by: Oliver, R, et al.
Published: (2004)

High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics
by: Reid, B, et al.
Published: (2014)