Fluorine containing C(60) derivatives for high-performance electron transporting field-effect transistors and integrated circuits
We report on electron transporting organic transistors and integrated ring oscillators based on four different solution processible fluorine containing C60 derivatives. Electron mobilities up to 0.15 cm2 V s are obtained from as-prepared bottom-gate, bottom-contact transistors utilizing gold source-...
| Հիմնական հեղինակներ: | , , , , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2008
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| Ամփոփում: | We report on electron transporting organic transistors and integrated ring oscillators based on four different solution processible fluorine containing C60 derivatives. Electron mobilities up to 0.15 cm2 V s are obtained from as-prepared bottom-gate, bottom-contact transistors utilizing gold source-drain electrodes. Despite the high mobility, no long-range structural order could be identified with the semiconductor films exhibiting amorphouslike characteristics. The good electron transport is attributed to the structural symmetry of the fullerene derivatives and the enhanced π -π interactions between C60 units even in the case of amorphouslike films. These advantageous characteristics make fluorine containing C60 derivatives attractive for application in high-performance, large-area organic electronics. © 2008 American Institute of Physics. |
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