Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells
Mixed lead-tin (Pb:Sn) halide perovskites are promising absorbers withnarrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskitetandem solar cells. However, solution processing of optimally thick Pb:Snperovskite films is notoriously difficult in comparison with their neat-Pbcounterparts. T...
Main Authors: | , , , , , , , , , , |
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Formato: | Dataset |
Idioma: | English |
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University of Oxford
2024
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author | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H |
author_facet | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H |
author_sort | Jin, H |
collection | OXFORD |
description | Mixed lead-tin (Pb:Sn) halide perovskites are promising absorbers withnarrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskitetandem solar cells. However, solution processing of optimally thick Pb:Snperovskite films is notoriously difficult in comparison with their neat-Pbcounterparts. This is partly due to the rapid crystallization of Sn-basedperovskites, resulting in films that have a high degree of roughness. Rougherfilms are harder to coat conformally with subsequent layers usingsolution-based processing techniques leading to contact between theabsorber and the top metal electrode in completed devices, resulting in a lossof VOC , fill factor, efficiency, and stability. Herein, this study employs anon-continuous layer of alumina nanoparticles distributed on the surface ofrough Pb:Sn perovskite films. Using this approach, the conformality of thesubsequent electron-transport layer, which is only tens of nanometres inthickness is improved. The overall maximum-power-point-tracked efficiencyimproves by 65% and the steady-state VOC improves by 28%. Application ofthe alumina nanoparticles as an interfacial buffer layer also results in highlyreproducible Pb:Sn solar cell devices while simultaneously improving devicestability at 65 °C under full spectrum simulated solar irradiance. Aged devicesshow a six-fold improvement in stability over pristine Pb:Sn devices,increasing their lifetime to 120 h |
first_indexed | 2024-09-25T04:13:53Z |
format | Dataset |
id | oxford-uuid:6b23d1d7-fd17-493b-8c2f-64bf05d60c50 |
institution | University of Oxford |
language | English |
last_indexed | 2024-09-25T04:13:53Z |
publishDate | 2024 |
publisher | University of Oxford |
record_format | dspace |
spelling | oxford-uuid:6b23d1d7-fd17-493b-8c2f-64bf05d60c502024-07-12T15:02:36ZAlumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar CellsDatasethttp://purl.org/coar/resource_type/c_ddb1uuid:6b23d1d7-fd17-493b-8c2f-64bf05d60c50EnglishSymplectic ElementsUniversity of Oxford2024Jin, HFarrar, MBall, JDasgupta, ACaprioglio, PNarayanan, SOliver, RRombach, FPutland, BJohnston, MSnaith, HMixed lead-tin (Pb:Sn) halide perovskites are promising absorbers withnarrow-bandgaps (1.25–1.4 eV) suitable for high-efficiency all-perovskitetandem solar cells. However, solution processing of optimally thick Pb:Snperovskite films is notoriously difficult in comparison with their neat-Pbcounterparts. This is partly due to the rapid crystallization of Sn-basedperovskites, resulting in films that have a high degree of roughness. Rougherfilms are harder to coat conformally with subsequent layers usingsolution-based processing techniques leading to contact between theabsorber and the top metal electrode in completed devices, resulting in a lossof VOC , fill factor, efficiency, and stability. Herein, this study employs anon-continuous layer of alumina nanoparticles distributed on the surface ofrough Pb:Sn perovskite films. Using this approach, the conformality of thesubsequent electron-transport layer, which is only tens of nanometres inthickness is improved. The overall maximum-power-point-tracked efficiencyimproves by 65% and the steady-state VOC improves by 28%. Application ofthe alumina nanoparticles as an interfacial buffer layer also results in highlyreproducible Pb:Sn solar cell devices while simultaneously improving devicestability at 65 °C under full spectrum simulated solar irradiance. Aged devicesshow a six-fold improvement in stability over pristine Pb:Sn devices,increasing their lifetime to 120 h |
spellingShingle | Jin, H Farrar, M Ball, J Dasgupta, A Caprioglio, P Narayanan, S Oliver, R Rombach, F Putland, B Johnston, M Snaith, H Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title | Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title_full | Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title_fullStr | Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title_full_unstemmed | Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title_short | Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells |
title_sort | alumina nanoparticle interfacial buffer layer for low bandgap lead tin perovskite solar cells |
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