TEM studies of misfit dislocations in strained-layer heterostructures

TEM studies of misfit dislocations in strained-layer heterostructures

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Zou, J, Cockayne, D
Μορφή:	Conference item
Έκδοση:	1994

Παρόμοια τεκμήρια

Misfit dislocations nucleated from the surface in strained-layer heterostructures
ανά: Zou, J, κ.ά.
Έκδοση: (1996)

MISFIT DISLOCATION GENERATION FROM DISSOCIATED THREADING DISLOCATIONS IN STRAINED-LAYER HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1995)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1993)

Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained-layer heterostructures
ανά: Zou, J, κ.ά.
Έκδοση: (1996)

GLIDE OF MISFIT DISLOCATIONS THROUGH MULTILAYER HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1994)

Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
ανά: Zou, J, κ.ά.
Έκδοση: (1994)

MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
ανά: Zou, J, κ.ά.
Έκδοση: (1993)

EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1993)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
ανά: Zou, J, κ.ά.
Έκδοση: (1997)

THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1994)

THEORETICAL CONSIDERATION OF EQUILIBRIUM DISSOCIATION GEOMETRIES OF 60-DEGREES MISFIT DISLOCATIONS IN SINGLE SEMICONDUCTOR HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1995)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
ανά: Zou, J, κ.ά.
Έκδοση: (1996)

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
ανά: Zou, J, κ.ά.
Έκδοση: (1996)

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
ανά: Zou, J, κ.ά.
Έκδοση: (1997)

MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
ανά: Zou, J, κ.ά.
Έκδοση: (1994)

DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
ανά: Cockayne, D, κ.ά.
Έκδοση: (1991)

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
ανά: Russell, J, κ.ά.
Έκδοση: (2000)

Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
ανά: A. A. Maldzhy, κ.ά.
Έκδοση: (2006-12-01)

A pile-up of edge dislocations to relax Misfit strain
ανά: Aziz Soufi, κ.ά.
Έκδοση: (2017-03-01)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
ανά: Zou, J, κ.ά.
Έκδοση: (2002)

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
ανά: A. M. Smirnov, κ.ά.
Έκδοση: (2016-01-01)

Ion irradiation of GeSi Si strained-layer heterostructures
ανά: Glasko, J, κ.ά.
Έκδοση: (1999)

Cooperative dissociations of misfit dislocations at bimetal interfaces
ανά: K. Liu, κ.ά.
Έκδοση: (2016-11-01)

Misfit dislocation dipoles in coated fibrous composites
ανά: Wang, Xu, κ.ά.
Έκδοση: (2016)

Misfits and dislocations of two-dimensional monolayer surfaces /
ανά: 322475 Dikande, Alain M., κ.ά.
Έκδοση: (1995)

INVESTIGATION OF POSSIBILITY OF THE MISFIT DISLOCATION DENSITY REDUCTION IN GE/SI FILMS WITH A BUFFER LAYER
ανά: V.A. Lapin, κ.ά.
Έκδοση: (2021-12-01)

A Multiscale Perspective on Misfit Dislocations in Oxide Films
ανά: Felip Sandiumenge
Έκδοση: (2019-03-01)

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
ανά: Glasko, J, κ.ά.
Έκδοση: (1996)

Strain release by 3D atomic misfit in fivefold twinned icosahedral nanoparticles with amorphization and dislocations
ανά: Zhen Sun, κ.ά.
Έκδοση: (2025-02-01)

Effects of surface relaxation on electron channelling contrast images of misfit dislocations
ανά: Wilkinson, A, κ.ά.
Έκδοση: (1994)

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
ανά: Russell-Harriott, J, κ.ά.
Έκδοση: (1998)

Transmission ion channeling analysis of isolated 60 degrees misfit dislocations
ανά: Breese, M, κ.ά.
Έκδοση: (2005)

On the Generation of Misfit Dislocation Structures at Interphase Boundaries in Lamellar Intermetallic Compounds
ανά: Gutkin, M.Y., κ.ά.
Έκδοση: (1996-08-01)

Misfit Strain in Superlattices Controlling the Electron-Lattice Interaction via Microstrain in Active Layers
ανά: Nicola Poccia, κ.ά.
Έκδοση: (2010-01-01)

Strain field mapping of dislocations in a Ge/Si heterostructure.
ανά: Quanlong Liu, κ.ά.
Έκδοση: (2013-01-01)

The misfits /
ανά: Howe, James, 1946-, author
Έκδοση: (2003)

Misfits/
ανά: 369454 De Berker, Paul, κ.ά.
Έκδοση: (1974)

Stress and relief of misfit strain of Ge/Si(001)
ανά: Wedler, G, κ.ά.
Έκδοση: (1998)

Stress and relief of misfit strain of Ge/Si(111)
ανά: Walz, J, κ.ά.
Έκδοση: (1998)

Science and misfits
ανά: Baird, J
Έκδοση: (2012)