Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
A new way of analysing the data in a variable stripe length method gain experiment is presented. The stripe length dependence of the gain is measured in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells (MQWs). We confirm that this arises from the change of the chemical potential along the excited...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2002
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| _version_ | 1797074158337654784 |
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| author | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y |
| author_facet | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y |
| author_sort | Kyhm, K |
| collection | OXFORD |
| description | A new way of analysing the data in a variable stripe length method gain experiment is presented. The stripe length dependence of the gain is measured in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells (MQWs). We confirm that this arises from the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. Comparison with the PL and PLE spectra suggests that the optical gain arises from weakly localised states in the quantum well in our low-indium-content sample. © 2002 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T23:32:19Z |
| format | Journal article |
| id | oxford-uuid:6c7ac56e-d0d0-4cb7-a304-6e96accb3697 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T23:32:19Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:6c7ac56e-d0d0-4cb7-a304-6e96accb36972022-03-26T19:11:02ZSaturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmasJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:6c7ac56e-d0d0-4cb7-a304-6e96accb3697EnglishSymplectic Elements at Oxford2002Kyhm, KTaylor, RRyan, JSomeya, TArakawa, YA new way of analysing the data in a variable stripe length method gain experiment is presented. The stripe length dependence of the gain is measured in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells (MQWs). We confirm that this arises from the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. Comparison with the PL and PLE spectra suggests that the optical gain arises from weakly localised states in the quantum well in our low-indium-content sample. © 2002 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title | Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title_full | Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title_fullStr | Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title_full_unstemmed | Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title_short | Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas |
| title_sort | saturation of gain in in0 02ga0 98n in0 16ga0 84n mqw plasmas |
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