Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Roughness analysis of GaN surf...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Roughness analysis of GaN surfaces at different annealing temperatures for an AlN buffer layer
Bibliographic Details
Main Authors:
Bae, M
,
Shin, D
,
Yi, SN
,
Doh, S
,
Na, J
,
Lee, K
,
Taylor, R
,
Park, S
Format:
Journal article
Published:
2007
Holdings
Description
Similar Items
Staff View
Description
Summary:
Similar Items
The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers
by: Shin, D, et al.
Published: (2006)
Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
by: Dmitri S. Arteev, et al.
Published: (2022-12-01)
Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
by: Zang, Keyan, et al.
Published: (2003)
Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE
by: Shin, D, et al.
Published: (2007)
Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
by: Chong-Rong Huang, et al.
Published: (2021-10-01)