Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds b...
| Main Authors: | , , , |
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| Format: | Conference item |
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2008
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| _version_ | 1826277707251449856 |
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| author | Alpass, C Murphy, J Jain, A Wilshaw, P |
| author_facet | Alpass, C Murphy, J Jain, A Wilshaw, P |
| author_sort | Alpass, C |
| collection | OXFORD |
| description | A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds by a dissociative mechanism, where transport occurs by the splitting of immobile dimers into fast monomers, rather than movement of nitrogen dimers. In other experiments, nitrogen-doped float-zone silicon is investigated using the standard dislocation unlocking technique. The results give an activation energy for effective nitrogen diffusion in silicon of 3.24±0.25eV at 500 to 750°C Using the assumption that the dislocation locking strength per nitrogen atom is the same as that of oxygen, a value of 200,000cm 2s-1 can be inferred for the effective diffusivity prefactor. If analysed using the dissociative model, an activation energy of 1.1 to 1.4eV is found for nitrogen monomer diffusion, with a diffusivity pre-factor of 30cm2s-1. © The Electrochemical Society. |
| first_indexed | 2024-03-06T23:32:58Z |
| format | Conference item |
| id | oxford-uuid:6cb170f8-be0f-4c1f-b303-4ae89ab95f37 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:32:58Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | oxford-uuid:6cb170f8-be0f-4c1f-b303-4ae89ab95f372022-03-26T19:12:41ZMeasurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski siliconConference itemhttp://purl.org/coar/resource_type/c_5794uuid:6cb170f8-be0f-4c1f-b303-4ae89ab95f37Symplectic Elements at Oxford2008Alpass, CMurphy, JJain, AWilshaw, PA modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds by a dissociative mechanism, where transport occurs by the splitting of immobile dimers into fast monomers, rather than movement of nitrogen dimers. In other experiments, nitrogen-doped float-zone silicon is investigated using the standard dislocation unlocking technique. The results give an activation energy for effective nitrogen diffusion in silicon of 3.24±0.25eV at 500 to 750°C Using the assumption that the dislocation locking strength per nitrogen atom is the same as that of oxygen, a value of 200,000cm 2s-1 can be inferred for the effective diffusivity prefactor. If analysed using the dissociative model, an activation energy of 1.1 to 1.4eV is found for nitrogen monomer diffusion, with a diffusivity pre-factor of 30cm2s-1. © The Electrochemical Society. |
| spellingShingle | Alpass, C Murphy, J Jain, A Wilshaw, P Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title | Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title_full | Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title_fullStr | Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title_full_unstemmed | Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title_short | Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon |
| title_sort | measurements of dislocation locking by near surface ion implanted nitrogen in czochralski silicon |
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