Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds b...
| Auteurs principaux: | , , , |
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| Format: | Conference item |
| Publié: |
2008
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