Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon

Бусад хувилбаруудыг харуулах (1)

A modified dislocation unlocking technique is used to measure dislocation locking due to nitrogen implanted into Czochralski silicon. The results show that near-surface dislocations can be locked by implanted nitrogen. The magnitude of the locking measured suggests that nitrogen transport proceeds b...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Alpass, C, Murphy, J, Jain, A, Wilshaw, P
Формат:	Conference item
Хэвлэсэн:	2008

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