Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses o...

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Những tác giả chính:	Kanisauskas, K, Affolder, A, Arndt, K, Bates, R, Benoit, M, Bello, F, Blue, A, Bortoletto, D, Buckland, M, Buttar, C, Caragiulo, P, Das, D, Dopke, J, Dragone, A, Ehrler, F, Fadeyev, V, Galloway, Z, Grabas, H, Gregor, I, Grenier, P, Grillo, A, Hiti, B, Hoeferkamp, M, Hommels, L, Huffman, B, John, J, Kenney, C, Kramberger, J, Liang, Z, Mandic, I, Maneuski, D, Martinez-Mckinney, F, MacMahon, S, Meng, L, Mikuž, M, Muenstermann, D, Nickerson, R, Peric, I, Phillips, P, Plackett, R, Rubbo, F, Segal, J, Seidel, S, Seiden, A, Shipsey, I, Song, W, Staniztki, M, Su, D, Tamma, C, Turchetta, R, Vigani, L, Volk, J, Wang, R, Warren, M, Wilson, F, Worm, S, Xiu, Q, Zhang, J, Zhu, H
Định dạng:	Journal article
Được phát hành:	IOP Publishing 2017

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

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