Wide-bandgap halide perovskite materials for photovoltaic and optoelectronic applications

<p>With increasing global surface temperatures due to greenhouse gas emissions from human activity, the global society is in urgent need of pivoting the energy system towards low or zero-emission energy sources. Photovoltaic solar energy has the potential to deliver substantial emission reduct...

Täydet tiedot

Bibliografiset tiedot
Päätekijä: Dyrvik, EG
Muut tekijät: Snaith, H
Aineistotyyppi: Opinnäyte
Kieli:English
Julkaistu: 2023
Aiheet:
Kuvaus
Yhteenveto:<p>With increasing global surface temperatures due to greenhouse gas emissions from human activity, the global society is in urgent need of pivoting the energy system towards low or zero-emission energy sources. Photovoltaic solar energy has the potential to deliver substantial emission reductions and is expected to make up a major portion of the energy mix in the remainder of the 21st century. Over the last decade, halide perovskite materials have shown great promise in bolstering and diversifying photovoltaic solar technologies, as well as the potential for efficient and colour-pure light-emitting diodes.</p> <p>Leaps of progress have been made on halide perovskite-based single-junction and tandem solar cell technologies, but triple-junction solar cells, which theoretically could provide an even higher power conversion efficiency, are still in the infancy. For mainly perovskite-based triple-junctions to reach the highest realistic power conversion efficiencies, top cell bandgaps in the range 1.95 to 2.05 eV are required. Herein, we review the achievements and progress that have been made on the topic of perovskite triple-junction solar cells and the important wide-bandgap (2 eV) top cell. We then go on to characterize our FAPb(Br<sub>0.7</sub>I<sub>0.3</sub>)<sub>3</sub>-based 2.0 eV single-junction solar cells. We identify the main reasons for V<sub>OC</sub>-loss in these cells and look into the effect of halide segregation on the performance. Finding that nonradiative recombination in the bulk is the main cause of V<sub>OC</sub>-loss and that halide segregation may be significantly more detrimental to the J<sub>SC</sub> than the V<sub>OC</sub>. Further, we investigate halide segregation and degradation trends in isolated films of this 2 eV material under the influence of different atmospheres. We observe untypical wavelength-shifts in the photoluminescence spectrum which may be linked to iodide-depletion under light exposure.</p> <p>Finally, we improve the performance of our green perovskite LEDs by introducing a novel composite p-contact comprising the organic hole-transporting polymer TFB deposited by solution processing and Al<sub>2</sub>O<sub>3</sub> deposited by atomic layer deposition. Due to the different chemical reactivity of the trimethyl aluminium precursor of the ALD process towards the oxide surface groups and the TFB polymer, the Al<sub>2</sub>O<sub>3</sub> has the dual function of being able to insulate any bare patches of the underlying transparent conducting oxide electrode, which were not adequately covered during the TFB processing, and intergrow in the porosities of the TFB layer and cause a swelling, further blocking any potential nonradiative recombination sites.</p>