APA (7 ম সংস্করণ) উদ্ধৃতি

Imbrici, P., Grottesi, A., D'Adamo, M., Mannucci, R., Tucker, S., & Pessia, M. (2009). Contribution of the central hydrophobic residue in the PXP motif of voltage-dependent K+ channels to S6 flexibility and gating properties.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Imbrici, P., A. Grottesi, M. D'Adamo, R. Mannucci, S. Tucker, এবং M. Pessia. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Imbrici, P., et al. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.