Imbrici, P., Grottesi, A., D'Adamo, M., Mannucci, R., Tucker, S., & Pessia, M. (2009). Contribution of the central hydrophobic residue in the PXP motif of voltage-dependent K+ channels to S6 flexibility and gating properties.
Citación estilo ChicagoImbrici, P., A. Grottesi, M. D'Adamo, R. Mannucci, S. Tucker, and M. Pessia. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.
Cita MLAImbrici, P., et al. Contribution of the Central Hydrophobic Residue in the PXP Motif of Voltage-dependent K+ Channels to S6 Flexibility and Gating Properties. 2009.
Warning: These citations may not always be 100% accurate.